Spin in solid state system has been considered as candidate for improving the efficiency of information transport and cryptology due to the quantum entanglement effect. Identification and design of quantum system that can be easily manipulated requires the construction of quantum bit (qubit), and is considered as an important step in the development of quantum computer. Nevertheless, due to thermal agitation that leads to short coherence life time in the spin correlation, current candidate for spintronics material needs to be operated under extremely low temperature. The above issue constraints the application of spintronics. Recently, the nitrogen-vacancy point defect (NV center) in diamond has raised intense interests due to the existence of individually addressable electron spin state as solid-state qubit even at room temperature. Although its quantum state can be initialized, manipulated, and measured with high fidelity via optically detected magnetic resonance method, the diamond based material has disadvantages in its transport wavelength and fabrication issues. Silicon carbide is one of the possible substitutes for diamond because its structure and characteristics are similar to diamond. Its natural atomic defect is demonstrated that they possess desirable spin coherence property similar to NV center in diamond and longer transport wavelength suited for communication purpose. It is therefore a system worthy of attracting research activities on tailoring defect states for quantum computing application. We are currently exploring the opportunity for creating and manipulating the desired defect states in SiC material using in house ion implanter and rapid thermal annealing apparatus. We are aiming to fabricate the desired defect states in conventional silicon wafer based on our previous understanding on the super-saturated silicon carbon alloy system. Meanwhile, we are also learning to build up density functional theory based calculation capability to further our understanding of the system.

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